Take a look at our *FILLED WITH FLOWERS* sections as well. As for DVDs, our girls LOVE watching their cousins play musical instruments, or come in for a hug after a long day of school. We have many favorites; you can check out our DVD section to see what we are watching.
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About Me
I'm an (almost) 70 year old grand dame who is finally trying to learn to enjoy my retirement. I live with my husband, my daughters and our kitty, Jolie. I love to sew, knit, paint, play cards and travel with my girls. We enjoy spoiling our four grand kitties and relaxing with friends.1. Field of the Invention
The present invention relates to a vertical cavity surface emitting laser (VCSEL), and more particularly to a VCSEL device that includes a semiconductor nanowire.
2. Description of Related Art
A vertical cavity surface emitting laser (VCSEL) is a semiconductor laser that emits a beam perpendicular to a plane of a wafer substrate, and is a promising candidate for use as a light source in large scale integrated optical circuits. Unlike conventional edge emitting lasers, a VCSEL emits the beam from a surface of the wafer.
A conventional VCSEL includes a semiconductor stack that includes a multilayered structure of semiconductor layers having different compositions that include, for example, a first semiconductor layer of a first conduction type (e.g., n-type), an active layer, and a second semiconductor layer of a second conduction type (e.g., p-type). A current flowing through the active layer is confined in the active layer through a distributed Bragg reflector (DBR) that includes a multilayered structure of semiconductor layers having different compositions. The semiconductor layers of the multilayered structure may include layers having a smaller bandgap and layers having a larger bandgap, where the layers with a larger bandgap are positioned closer to the active layer and the layers with a smaller bandgap are positioned farther from the active layer.
The active layer and the DBR provide optical confinement in a vertical direction. A lower mirror and an upper mirror are formed on the lower and upper portions of the DBR, respectively. A p-type region of a first conductivity type is formed in a region between the lower and upper mirrors. A voltage is applied to the p-type region to provide
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